Super-junction trench MOSFET with resurf step oxide and the...

Details Super-junction trench MOSFET with resurf step oxide and the... Super-junction trench MOSFET with resurf step oxide and the...

2009-12-28

2011-11-29

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21410, C257SE29256, C438S270000

Reexamination Certificate

active

08067800

ABSTRACT:
A super-junction trench MOSFET with Resurf Stepped Oxide is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. . . . . Furthermore, the fabrication method can be implemented more reliably with lower cost.

REFERENCES:
patent: 6982459 (2006-01-01), Suzuki et al.
patent: 2006/0065923 (2006-03-01), Pfirsch
patent: 2008-227533 (2008-09-01), None

Affiliated with

Also associated with

Rating

Super-junction trench MOSFET with resurf step oxide and the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Super-junction trench MOSFET with resurf step oxide and the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Super-junction trench MOSFET with resurf step oxide and the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4282629