Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2010-11-02
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29009, C257S409000
Reexamination Certificate
active
07825466
ABSTRACT:
The present invention provides a super-junction semiconductor element having a high voltage resistance and a low resistivity, while being successfully reduced in the size thereof, which comprises a semiconductor substrate3; a pair of electrodes1, 2provided respectively on a top surface12and a back surface13of the semiconductor substrate3; a parallel pn layer provided between the top surface12and the back surface13of said semiconductor substrate, having n-type semiconductor layers4allowing current flow under the ON state but being depleted under the OFF state, and p-type semiconductor layers5alternately arranged therein; and an insulating film6formed so as to surround the parallel pn layer; wherein the insulating film6is formed at a predetermined position.
REFERENCES:
patent: 6844592 (2005-01-01), Yamaguchi et al.
patent: 7256432 (2007-08-01), Okamoto et al.
patent: 2003/0132450 (2003-07-01), Minato et al.
patent: 2004/0206989 (2004-10-01), Aida et al.
patent: 1405897 (2003-03-01), None
patent: 1436372 (2003-08-01), None
patent: 1445860 (2003-10-01), None
patent: 2001-135819 (2001-05-01), None
patent: 2003-273355 (2003-09-01), None
Chinese Office Action dated Aug. 24, 2007 with an English Translation.
Miura Yoshinao
Ninomiya Hitoshi
Gurley Lynne A
Matthews Colleen A
McGinn IP Law Group PLLC
NEC Electronics Corporation
LandOfFree
Super-junction semiconductor element and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Super-junction semiconductor element and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Super-junction semiconductor element and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4251969