Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-06-05
2009-06-16
Le, Thao X (Department: 4136)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S218000, C438S481000, C438S738000, C438S740000
Reexamination Certificate
active
07547641
ABSTRACT:
The present invention provides semiconductor structures comprised of stressed channels on hybrid oriented. In particular, the semiconductor structures include a first active area having a first stressed semiconductor surface layer of a first crystallographic orientation located on a surface of a buried insulating material and a second active area having a second stressed semiconductor surface layer of a second crystallographic orientation located on a surface of a dielectric material. A trench isolation region is located between the first and second active area, and the trench isolation region is partially filled with a trench dielectric material and the dielectric material that is present underneath said second stressed semiconductor surface layer. The dielectric material within the trench isolation region has lower stress compared to that is used in conventional STI process and it is laterally abuts at least the second stressed semiconductor surface layer and extends to an upper surface of the trench isolation region.
REFERENCES:
patent: 5906951 (1999-05-01), Chu et al.
patent: 6974981 (2005-12-01), Chidambarrao et al.
patent: 7023055 (2006-04-01), Ieong et al.
patent: 7098508 (2006-08-01), Ieong et al.
patent: 7125785 (2006-10-01), Cohen et al.
patent: 7145166 (2006-12-01), Lee
patent: 7157774 (2007-01-01), Yeo et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2005/0045995 (2005-03-01), Ieong et al.
patent: 2005/0093104 (2005-05-01), Ieong et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2006/0145264 (2006-07-01), Chidambarrao et al.
Ieong Meikei
Ouyang Qiqing C.
Alexanian Vazken
International Business Machines - Corporation
Le Thao X
Payen Marvin
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Super hybrid SOI CMOS devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Super hybrid SOI CMOS devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Super hybrid SOI CMOS devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4077886