Substrates for silicon solar cells and methods of producing...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...

Reexamination Certificate

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Details

C438S627000, C438S643000, C438S653000

Reexamination Certificate

active

07977220

ABSTRACT:
Aspects of the invention include methods for depositing silicon on a substrate. In certain embodiments, the methods include exposing a substrate containing silicon to a halogenated silane in a manner sufficient to deposit the silicon on the substrate. In certain embodiments, the method includes providing a substrate, one or more sources of gas, and a reaction vessel that is in fluid communication with the substrate and the one or more sources of gas. In certain embodiments, the substrate is a low or metallurgical grade silicon which may be subjected to a purification process. In certain embodiments, the reaction vessel is a particle bed reaction vessel that includes a moving bed, such as a fluidized bed which contains silicon and the gas includes a halide.

REFERENCES:
patent: 5855678 (1999-01-01), Sanjurjo et al.
patent: 6633069 (2003-10-01), Nii et al.
patent: 7510692 (2009-03-01), Alvarez et al.
patent: 20307886 (2003-08-01), None
Invitation to Pay Additional Fees and Annex to Form PCT/ISA/206 Communication Relating to the Results of the Partial International Search, Jun. 24, 2009, consists of 6 unnumbered pages.
PCT Search Report and Written Opinion for PCT/US2009/036050, Aug. 28, 2009, consists of 14 pages.

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