Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2011-07-12
2011-07-12
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C438S627000, C438S643000, C438S653000
Reexamination Certificate
active
07977220
ABSTRACT:
Aspects of the invention include methods for depositing silicon on a substrate. In certain embodiments, the methods include exposing a substrate containing silicon to a halogenated silane in a manner sufficient to deposit the silicon on the substrate. In certain embodiments, the method includes providing a substrate, one or more sources of gas, and a reaction vessel that is in fluid communication with the substrate and the one or more sources of gas. In certain embodiments, the substrate is a low or metallurgical grade silicon which may be subjected to a purification process. In certain embodiments, the reaction vessel is a particle bed reaction vessel that includes a moving bed, such as a fluidized bed which contains silicon and the gas includes a halide.
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Invitation to Pay Additional Fees and Annex to Form PCT/ISA/206 Communication Relating to the Results of the Partial International Search, Jun. 24, 2009, consists of 6 unnumbered pages.
PCT Search Report and Written Opinion for PCT/US2009/036050, Aug. 28, 2009, consists of 14 pages.
Luu Chuong A.
SRI - International
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