Substrates and methods for gas phase deposition of semiconductor

Details Substrates and methods for gas phase deposition of semiconductor Substrates and methods for gas phase deposition of semiconductor

1995-06-07

1996-12-31

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257618, 324 715, H01L 2358

Patent

active

055896936

ABSTRACT:
A novel substrate for growth of material by chemical phase deposition includes a temperature monitoring zone formed by applying a coating of growth preventing material (e.g., SiO.sub.x or SiN.sub.x) to a portion of the substrate. The temperature of the substrate can be monitored during growth of a desired material using an optical pyrometer having its field of view directed at the temperature monitoring zone.

REFERENCES:
patent: 5009926 (1991-04-01), Fukuda
patent: 5213985 (1993-05-01), Sandroff et al.
patent: 5318801 (1994-06-01), Snail et al.
patent: 5387309 (1995-02-01), Bobel et al.
Epitaxial Growth Rate Measurements During Molecular Beam Epitaxy, A. J. Spring Thorpe, et al., J. Vac. Sci. Technol. B 8 (2), Mar./Apr. 1990, pp. 266-270.
Chemical Beam Epitaxy of Ga.sub.0.47 In.sub.0.53 As Quantum Wells and Heterostructure Devices, W. T. Tsang, Journal of Crystal Growth 81 (1987), pp. 261-269.

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