Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent
1994-07-08
1996-08-20
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
257200, H01L 310328
Patent
active
055481361
ABSTRACT:
The invention provides a semiconductor substrate comprising a substrate of a first material and a crystal growth layer formed on the substrate, the crystal growth layer being made of compound semiconductors different from the first material wherein the substrate has a surface diffusion region being heavily doped with one or more elements of the compound semiconductors. A silicon substrate receives an ion-implantation of one or more elements constituting a compound semiconductor different except for silicon at a high impurity concentration for a heat treatment at a higher temperature than a growth temperature of the compound semiconductor and subsequent cooling down to the growth temperature of the compound semiconductor followed by crystal growth of the compound semiconductor on the substrate.
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patent: 5413951 (1995-05-01), Ohori et al.
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Bowers Courtney A.
Crane Sara W.
NEC Corporation
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