Substrate temperature control in an ALD reactor

Details Substrate temperature control in an ALD reactor Substrate temperature control in an ALD reactor

2004-08-18

2010-10-05

Kackar, Ram N. (Department: 1716)

Coating apparatus

Gas or vapor deposition

With treating means

C156S345510, C156S345520, C156S345530, C361S234000, C279S128000

Reexamination Certificate

active

07806983

ABSTRACT:
A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. An electrostatic chuck (ESC) retains the substrate. A backside gas increases thermal coupling between the substrate and the ESC. The ESC is cooled via a coolant flowing through a coolant plate and heated via a resistive heater. Various arrangements are disclosed.

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