Substrate surface treatment method capable of removing a spontan

Details Substrate surface treatment method capable of removing a spontan Substrate surface treatment method capable of removing a spontan

1996-08-27

1998-10-13

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438974, H01L 21265

Patent

active

058211586

ABSTRACT:
On treating a substrate surface of a single crystal silicon substrate, Ge ions are preliminarily implanted into the substrate surface to be formed as a Ge-implanted silicon film on the single crystal silicon substrate. A film surface of Ge-implanted silicon film is treated by oxidizing the film surface to form a spontaneous oxide film. Subsequently, the spontaneous oxide film is subjected to a heat treatment in a reduced-pressure atmosphere to remove the spontaneous oxide film. Alternatively, the spontaneous oxide film is subjected to a heat treatment with a reducing gas of, for example, a hydrogen gas, a silane-based gas, or a GeH.sub.4 gas supplied onto the spontaneous oxide film to remove the spontaneous oxide film. Preferably, the Ge ions are preliminarily implanted into the substrate surface to be formed as Ge-implanted silicon film which consists, in atomic percent, essentially of at least 1% Ge.

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J. Tsuchimoto et al.;"Effect on in-situ SiH.sub.4 added H.sub.2 pre-baking for removal of the native SiO.sub.2 "; 1992; p. 702; Autumnal Conference of Institute of Applied PhysicsEngineers in Japan, 30a-ZH-1.

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