Substrate release methods and apparatuses

Details Substrate release methods and apparatuses Substrate release methods and apparatuses

2009-05-28

2010-06-29

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S057000, C438S073000, C257SE21090, C257SE21561

Reexamination Certificate

active

07745313

ABSTRACT:
The present disclosure relates to methods and apparatuses for fracturing or breaking a buried porous semiconductor layer to separate a 3-D thin-film semiconductor semiconductor (TFSS) substrate from a 3-D crystalline semiconductor template. The method involves forming a sacrificial porous semiconductor layer on the 3-D features of the template. A variety of techniques may be used to fracture and release the mechanically weak porous semiconductor layer without damaging the TFSS substrate layer or the template layer such as pressure variations, thermal stress generation, and mechanical bending. The methods also allow for processing three dimensional features not possible with current separation processes. Optional cleaning and final lift-off steps may be performed as part of the release step or after the release step.

REFERENCES:
patent: 2008/0210294 (2008-09-01), Moslehi
patent: 2008/0289684 (2008-11-01), Moslehi
patent: 2009/0042320 (2009-02-01), Wang et al.
patent: 2009/0107545 (2009-04-01), Moslehi

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