Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2007-08-14
2007-08-14
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S024000, C216S026000, C219S121600, C219S121670, C219S121710
Reexamination Certificate
active
10976248
ABSTRACT:
A substrate processing method is provided including: shaping a laser beam emitted from a laser beam source into a beam having a focal depth larger than the maximum value of a variation in thickness of a processing area portion of a processed substrate and the maximum value of a variation in bend thereof by making the laser beam pass through an diffractive optical element; forming plural etching holes by irradiating the shaped beam onto a film formed on the substrate to remove the film; and forming plural recessed portions by etching the substrate through the plural etching holes.
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Amako Jun
Yoshimura Kazuto
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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