Substrate processing method and substrate processing apparatus

Details Substrate processing method and substrate processing apparatus Substrate processing method and substrate processing apparatus

2006-07-28

2011-12-13

Everhart, Caridad (Department: 2895)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

By differential heating

C257SE21214, C257SE21324, C430S030000, C118S697000

Reexamination Certificate

active

08076252

ABSTRACT:
In a substrate processing method, a substrate to be processed is mounted on a mounting table in a processing chamber of a substrate processing apparatus, and while heating the substrate by a heating unit through the mounting table to a processing temperature of 700° C. or higher, the substrate is processed. The substrate to be processed is loaded into the processing chamber, a first preliminary heating is performed until the substrate reaches a prescribed temperature while being mounted on the mounting table. Then, substrate supporting pins of the mounting table are elevated, and a second preliminary heating is performed in a state where the substrate is held on the substrate supporting pins. Then, the substrate supporting pins are moved down to mount the substrate on the mounting table and a process such as plasma oxidation is performed thereon.

REFERENCES:
patent: 6313017 (2001-11-01), Varhue
patent: 2006/0201414 (2006-09-01), Brabant et al.
patent: 2006/0231032 (2006-10-01), Murakami et al.
patent: 10-294287 (1998-11-01), None
patent: 2001 308084 (2001-11-01), None
patent: 2002 164399 (2002-06-01), None
patent: 2003-77863 (2003-04-01), None
Translation of JP 10-294287, Kawakami (Nov. 1998), 21 pages.

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