Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-01-15
2011-10-11
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C438S724000, C216S073000
Reexamination Certificate
active
08034720
ABSTRACT:
A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.
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Office Action issued Jun. 1, 2011, in Japanese Patent Application No. 2007-021020 filed Apr. 13, 2007 (with English-language Translation).
Kato Chie
Nishimura Eiichi
Yamawaku Jun
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
Vinh Lan
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