Substrate processing method and substrate processing apparatus

Details Substrate processing method and substrate processing apparatus Substrate processing method and substrate processing apparatus

2011-07-05

2011-07-05

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S775000, C438S791000, C438S795000, C438S508000, C216S036000

Reexamination Certificate

active

07972979

ABSTRACT:
Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C.

REFERENCES:
patent: 2008/0014711 (2008-01-01), Choi et al.
patent: 2008/0305611 (2008-12-01), Hirota
patent: 10-321719 (1998-12-01), None

Affiliated with

Also associated with

Rating

Substrate processing method and substrate processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate processing method and substrate processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate processing method and substrate processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2620391