Substrate processing method and substrate processing apparatus

Details Substrate processing method and substrate processing apparatus Substrate processing method and substrate processing apparatus

2005-03-22

2005-03-22

Lund, Jeffrie R. (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With etchant gas supply or exhaust structure located outside...

C156S345330, C118S715000

Reexamination Certificate

active

06869499

ABSTRACT:
After semiconductor wafers W have been processed with ozone gas and steam fed into a processing vessel10, air is fed into the processing vessel10from an air supply source connected to an ozone gas supply pipe42for feeding ozone gas into the processing vessel10, whereby an atmosphere of the ozone gas in the processing vessel10is replaced with an atmosphere of the air.

REFERENCES:
patent: 5250323 (1993-10-01), Miyazaki
patent: 5616208 (1997-04-01), Lee
patent: 5683516 (1997-11-01), DeDontney et al.
patent: 5710079 (1998-01-01), Sukharev
patent: 5727578 (1998-03-01), Matthews
patent: 5819684 (1998-10-01), Hawkins et al.
patent: 5851294 (1998-12-01), Young et al.
patent: 5911837 (1999-06-01), Matthews
patent: 5967156 (1999-10-01), Rose et al.
patent: 6030460 (2000-02-01), Sukharev
patent: RE36957 (2000-11-01), Brors et al.
patent: 6182603 (2001-02-01), Shang et al.
patent: 6267125 (2001-07-01), Bergman et al.
patent: 6273108 (2001-08-01), Bergman et al.
patent: 6349669 (2002-02-01), Matsumura et al.
patent: 6383300 (2002-05-01), Saito et al.
patent: 6444037 (2002-09-01), Frankel et al.
patent: 6503330 (2003-01-01), Sneh et al.
patent: 6688020 (2004-02-01), Toshima et al.
patent: 6729041 (2004-05-01), Shindo et al.
patent: 20010032396 (2001-10-01), Toshima et al.
patent: 20020045008 (2002-04-01), Toshima et al.
patent: 20020132480 (2002-09-01), Shindo et al.
patent: 20020185225 (2002-12-01), Toshima et al.
patent: 20040063319 (2004-04-01), Toshima et al.
patent: 20040069226 (2004-04-01), Yoshida et al.

Affiliated with

Also associated with

Rating

Substrate processing method and substrate processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate processing method and substrate processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate processing method and substrate processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3371211