Substrate processing method and semiconductor manufacturing...

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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Details

C438S680000, C438S905000, C257SE21170, C257SE21320, C257SE21054, C257SE21082, C257SE21267, C257SE21274, C257SE21311, C257SE21521

Reexamination Certificate

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07727780

ABSTRACT:
A semiconductor manufacturing apparatus and substrate processing method includes a step of acquiring a measurement value based on a first detecting and a second detecting section and determining a first difference of measurement values between the first detecting section and the second detecting section, comparing between a previously stored second difference between measurement values concerning the first detecting section and the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, and a step of processing the substrate by flowing a cooling gas through the cooling-gas passage while heating the process chamber, and placing the heating device and the cooling device under a control section depending upon a pressure value corrected.

REFERENCES:
patent: 6864463 (2005-03-01), Ikeda
patent: 7024266 (2006-04-01), Edo
patent: 7472581 (2009-01-01), Kitazawa et al.
patent: 2003/0021671 (2003-01-01), Edo
patent: 2006/0207314 (2006-09-01), Kitazawa et al.
patent: A 5-121344 (1993-05-01), None
patent: A 2002-75890 (2002-03-01), None
patent: A 2002-299257 (2002-10-01), None
patent: A 2002-299269 (2002-10-01), None
patent: A 2003-31510 (2003-01-01), None
patent: A 2005-183596 (2005-07-01), None
patent: WO 2005/008755 (2005-01-01), None

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