Substrate processing method and computer storage medium

Details Substrate processing method and computer storage medium Substrate processing method and computer storage medium

2008-08-15

2011-12-27

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21240

Reexamination Certificate

active

08084372

ABSTRACT:
In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. Then, the coating film in which the molecular bond of polysilazane has been cut is oxidized while the coating film is being heated. Then, the oxidized coating film is baked at a baking temperature equal to or higher than a heating temperature when the coating film is oxidized.

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Office Action issued Jul. 26, 2011, in Japanese Patent Application No. JP2008-192129 with English Translation.

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