Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-10
2007-04-10
Malsawma, Lex H. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S692000
Reexamination Certificate
active
10853130
ABSTRACT:
There is provided a substrate processing method which, even when a material having a low mechanical strength is employed as an interlayer dielectric, can produce a semiconductor device having a multi-layer interconnect structure of fine interconnects in higher yield. A substrate processing method according to the present invention includes steps of: providing a substrate having interconnect recesses formed in a surface; forming a metal film on the surface of the substrate by plating to embed the metal film in the interconnect recesses; removing the metal film formed in an ineffective region of the substrate and an extra metal film formed in an effective region of the substrate; and flattening the surface of the substrate after removal of the metal film by performing chemical-mechanical polishing.
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Hidekazu Nagano
Hidenao Suzuki
Hiroyuki Kanda
Katsuhiko Tokushige
Mishima Koji
Ebara Corporation
Malsawma Lex H.
Wenderoth , Lind & Ponack, L.L.P.
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