Substrate processing device and processing method

Details Substrate processing device and processing method Substrate processing device and processing method

2006-09-05

2006-09-05

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

C438S706000, C438S708000, C438S113000, C438S460000, C219S121600, C219S121670, C219S121680

Reexamination Certificate

active

07101797

ABSTRACT:
In a state where a process gas including SF.sub. 6 and O.sub. 2 is supplied in a chamber, a laser light irradiator provided outside the chamber irradiates a laser light onto a substrate. At the portion of the substrate onto which the laser light is irradiated, the material that makes up the substrate is excited and converted into a gaseous substance by reacting with the process gas. The temperature of the substrate placed on a stage is kept at a predetermined temperature since a temperature adjuster supplies a chiller to a coolant flow passage provided inside the stage.

REFERENCES:
patent: 4643799 (1987-02-01), Tsujii et al.
patent: 5328558 (1994-07-01), Kawamura
patent: 5912186 (1999-06-01), Yoshino et al.
patent: 6368977 (2002-04-01), Narita et al.
patent: 2002/0170891 (2002-11-01), Boyle et al.
patent: S59-71599 (1984-09-01), None
patent: 61-88101 (1986-06-01), None
patent: 64-034363 (1989-02-01), None
patent: 06-120334 (1994-04-01), None
patent: 06-177073 (1994-06-01), None
patent: 09-141645 (1997-06-01), None
patent: 10-034363 (1998-02-01), None
patent: 10-199826 (1998-07-01), None
patent: 10-305420 (1998-11-01), None
patent: 11-050274 (1999-02-01), None
patent: 2001-176820 (2001-06-01), None
patent: 2001-219290 (2001-08-01), None
patent: 2001-230209 (2001-08-01), None
patent: 2002-100825 (2002-04-01), None
patent: 2002-144070 (2002-05-01), None

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