Substrate processing apparatus with bottom-mounted remote plasma

Details Substrate processing apparatus with bottom-mounted remote plasma Substrate processing apparatus with bottom-mounted remote plasma

1996-11-13

1999-08-10

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

118723MW, 118725, H05H 100

Patent

active

059353341

ABSTRACT:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

REFERENCES:
patent: 5403434 (1995-04-01), Moslehi

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