Substrate processing apparatus and semiconductor devices...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

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C257SE21170

Reexamination Certificate

active

07943528

ABSTRACT:
Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.

REFERENCES:
patent: 2009/0223926 (2009-09-01), Hirano
patent: 2009/0242127 (2009-10-01), Koshimizu et al.
patent: 2009/0255631 (2009-10-01), Sato
patent: 2010/0183827 (2010-07-01), Hirayama et al.
patent: 2010/0248489 (2010-09-01), Koguchi et al.
patent: 2010/0269980 (2010-10-01), Nishimura et al.
patent: 2004-95940 (2004-03-01), None

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