Substrate processing apparatus and reaction container

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

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Details

C118S7230AN, C118S7230ER, C156S345430, C156S345440, C156S345450, C156S345550

Reexamination Certificate

active

08047158

ABSTRACT:
A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

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Machine Translation for JP09055372. Japanese Patent Office. http://www4.ipdl.inpit.go.jp/Tokujitu/PAJdetail.ipdl?N0000=60&N0120=01&N2001=2&N3001=H09-055372.

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