Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-14
2009-08-25
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S785000, C257SE21477, C257SE21586, C118S503000
Reexamination Certificate
active
07579276
ABSTRACT:
To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber1for processing a substrate2; a substrate carrying port10provided on a sidewall of the processing chamber1, for carrying-in/carrying-out the substrate2to/from the processing chamber1; a holder provided so as to be lifted and lowered in the processing chamber1, for holding the substrate2; supply ports3and4provided above the holder, for supplying gas into the processing chamber1; an exhaust duct35provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber1; and an exhaust port5provided below an upper surface of the exhaust duct35when the substrate is processed, for exhausting the gas discharged by the exhaust duct35outside the processing chamber1, wherein at least a part of a member constituting the exhaust duct35is provided so as to be lifted and lowered.
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Horii Sadayoshi
Itatani Hideharu
Sano Atsushi
Yanai Hidehiro
Everhart Caridad M
Hitachi Kokusai Electric Inc.
Oliff & Berridg,e PLC
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