Substrate processing apparatus

Details Substrate processing apparatus Substrate processing apparatus

1996-01-25

1998-06-30

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118723R, 118723E, 118725, 156345, C23C 1600

Patent

active

057727708

ABSTRACT:
A plasma CVD apparatus comprises an outer chamber having an exhaust hole, an inner chamber disposed in the outer chamber, a reactive gas inlet pipe communicating with the inner chamber, a first exhaust pipe disposed so as to communicate with the inner chamber, the first exhaust pipe extending at least to an inner wall surface of the outer chamber, and a second exhaust pipe communicating with the exhaust hole. Preferably the forward end of the first exhaust pipe is inserted into the exhaust hole, the forward end of the first exhaust pipe projects outward beyond the inner wall surface of the outer chamber, and a spacing is formed between the first exhaust pipe and the exhaust hole. The reactive gases flow into the inner chamber through the reactive gas inlet pipe and directly flow out of the outer chamber through the first exhaust pipe, thereby preventing the reactive gases from flowing into the outer chamber.

REFERENCES:
patent: 4987856 (1991-01-01), Hey
patent: 5232508 (1993-08-01), Arena
patent: 5336326 (1994-08-01), Karner

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