Substrate processing apparatus

Details Substrate processing apparatus Substrate processing apparatus

2010-01-19

2011-11-08

Olsen, Allan (Department: 1716)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C427S569000, C134S001100, C134S022100, C156S345540

Reexamination Certificate

active

08052887

ABSTRACT:
When plasma processing is finished, a gate valve13ais closed and cleaning gas is ejected from holes121aof a shower plate121, and at the same time, a microwave is generated from a microwave generator101. Further, at this time, the inside of a process chamber110is exhausted through a second exhaust port106. Since the exhaust is conducted through a second exhaust port106positioned lower than a wafer stage104in a lowered state when the inside of the process chamber110is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber110.

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