Substrate preparation method for a MEMS fabrication process

Details Substrate preparation method for a MEMS fabrication process Substrate preparation method for a MEMS fabrication process

2007-11-06

2009-12-29

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C257S415000, C257SE21613, C257SE29324

Reexamination Certificate

active

07638349

ABSTRACT:
Provided is a substrate preparation method for a micro-electromechanical system (MEMS) fabrication process. The method includes the step of depositing at least four metal layers interspersed with interlayer dielectric (ILD) layers onto a silicon wafer substrate. A passivation layer is deposited onto an outermost metal layer and at least a portion of the passivation layer is masked with a photoresist. A pit is etched through the photoresist in the substrate, said pit having a base and sidewalls. Etching is carried out along an edge of the substrate to expose the last metal layer to define bonding pads. A step of etching is carried out on either side of the pit to expose the outermost metal layer to define electrode portions. The bonding pads are for operatively connecting a microprocessor for controlling a heater element suspended in the pit between the electrode portions.

REFERENCES:
patent: 6672710 (2004-01-01), Silverbrook et al.
patent: 7140084 (2006-11-01), Yamada et al.
patent: 2003/0146464 (2003-08-01), Prophet
patent: 2004/0100532 (2004-05-01), Silverbrook

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