Substrate of semiconductor device and fabrication method...

Details Substrate of semiconductor device and fabrication method... Substrate of semiconductor device and fabrication method...

2006-11-28

2006-11-28

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S486000, C438S778000, C438S928000

Reexamination Certificate

active

07141462

ABSTRACT:
There are provided a substrate of a semiconductor device and a fabrication method thereof which suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrate by means of reduced pressure thermal CVD. It suppresses the impurity from infiltrating from the glass substrate to an active region of the TFT in the later process.

REFERENCES:
patent: 4851363 (1989-07-01), Troxell et al.
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5418393 (1995-05-01), Hayden
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5477357 (1995-12-01), Suzuki et al.
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5796121 (1998-08-01), Gates
patent: 5844255 (1998-12-01), Suzuki et al.
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 5990542 (1999-11-01), Yamazaki
patent: 6083801 (2000-07-01), Ohtani
patent: 6160272 (2000-12-01), Arai et al.
patent: 6268617 (2001-07-01), Hirakata et al.
patent: 6271066 (2001-08-01), Yamazaki et al.
patent: 6384818 (2002-05-01), Yamazaki et al.
patent: 6465287 (2002-10-01), Yamazaki et al.
patent: 6478263 (2002-11-01), Yamazaki et al.
patent: 6528820 (2003-03-01), Yamazaki et al.
patent: 6562672 (2003-05-01), Yamazaki et al.
patent: 6849872 (2005-02-01), Yamazaki et al.
patent: 6964890 (2005-11-01), Yamazaki et al.
patent: 2001/0051416 (2001-12-01), Yamazaki et al.
patent: 2005/0158901 (2005-07-01), Yamazaki et al.
patent: 2005/0189592 (2005-09-01), Yamazaki et al.
patent: 0 532 314 (1993-03-01), None
patent: 0 532 314 (1993-03-01), None
patent: 58-134476 (1983-08-01), None
patent: 59-89436 (1984-05-01), None
patent: 05-055582 (1993-03-01), None
patent: 06-102534 (1994-04-01), None
patent: 06-296023 (1994-10-01), None

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