Substrate noise coupling reduction for VLSI applications with mi

Details Substrate noise coupling reduction for VLSI applications with mi Substrate noise coupling reduction for VLSI applications with mi

1991-09-03

1994-05-31

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257500, 257392, 307469, 307496, 307451, H01C 2976, H01C 2994, H01C 2900, G06F 738

Patent

active

053171837

ABSTRACT:
The internal electrical noise generated by circuits of a VLSI chip is controlled by separating the logic circuit substrate contacts from the logic circuits ground contacts. A separate return path interconnects each contact to card ground. Further noise reduction is achieved by providing a void region between the noise generating devices and the "quiet" devices. A substrate contact ring is provided in the void region. The substrate contact ring is connected by a separate path to card ground.

REFERENCES:
patent: 4672584 (1987-06-01), Tsuji et al.
"State of the art and Future prospects for Analogue signal Processing . . . "-Temes et al.; 1988; pp. 1655-1659.
"The Design of High-Performance Analog Circuits on Digital CMOS chips"; Vittoz; 1985; pp. 657-665.

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