Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-08-30
2011-08-30
Tran, Binh X (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C156S345120
Reexamination Certificate
active
08008203
ABSTRACT:
A polishing method and a polishing apparatus capable of polishing a surface of a substrate made of SiC or diamond extremely smoothly and efficiently without causing subsurface damage are provided. A polishing platen1can rotate around a rotating shaft4, and is made of quartz having high transparency to ultraviolet radiation. A large number of grooves11are arranged on a front surface of the polishing platen1in a lattice form, and each of the grooves11is filled with solid photocatalytic particles20(CeO2). The polishing platen1is relatively rubbed against a to-be-polished surface30A of a substrate30made of silicon carbide (SiC) or diamond (C) while pressing the polishing platen1to the to-be-polished surface30A of the substrate30with a very high pressure, thereby the to-be-polished surface30A is oxidized by the solid photocatalytic particles20to perform chemical polishing. The oxidation of the to-be-polished surface30A is promoted by applying ultraviolet radiation from an ultraviolet source lamp2, and polishing is promoted by heating by an infrared source lamp3.
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Cathey, Jr. David
National Universtiy Corporation Kumamoto University
Oliff & Berridg,e PLC
Tran Binh X
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