Substrate manufacturing method

Details Substrate manufacturing method Substrate manufacturing method

2008-07-08

2008-07-08

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S455000

Reexamination Certificate

active

07396734

ABSTRACT:
In a method of manufacturing a bonded substrate stack by bonding the bonding surfaces of the first and second substrates, a bonding surface having a hydrophobic region and a hydrophilic region is formed by partially processing at least one of the bonding surfaces of the first and second substrates, and then the bonding surfaces of the first and second substrates are bonded to each other.

REFERENCES:
patent: 5371037 (1994-12-01), Yonehara
patent: 5374564 (1994-12-01), Bruel
patent: 5451547 (1995-09-01), Himi et al.
patent: 5593915 (1997-01-01), Ohoka
patent: 5750000 (1998-05-01), Yonehara et al.
patent: 5953620 (1999-09-01), Katou et al.
patent: 6150031 (2000-11-01), Yonehara
patent: 6156624 (2000-12-01), Yamagata et al.
patent: 6309505 (2001-10-01), Takisawa et al.
patent: 2002/0171080 (2002-11-01), Faris
patent: 2004/0020520 (2004-02-01), Kim et al.
patent: 2004/0259328 (2004-12-01), Ito et al.
patent: 5-21338 (1993-01-01), None
patent: 5-211128 (1993-08-01), None
patent: 7-249749 (1995-09-01), None
patent: 9-331049 (1997-12-01), None
patent: 10-256107 (1998-09-01), None
patent: 3294934 (2002-04-01), None
M. Shimbo et al., “Silicon-to-Silicon Direct Bonding Method,” 60(8)J. Appl. Phys.2987-89 (Oct. 1986).
Takao Abe et al., “Silicon Wafer-Bonding Process Technology for SOI Structures,”Proceedings of the 4thInternational Symposium on Silicon-on-Insulator Technology and Devices, May 6-11, 1990, Montreal, pp. 1-11.
G.G. Goetz, “Centralized Reaction Bonding,”Electrochemical Society, Bonding Symp., 1991, pp. 65-72.

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