Substrate-level assembly for an integrated device,...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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C257SE27122

Reexamination Certificate

active

08049287

ABSTRACT:
A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.

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Sebastiano, Conti et al., “Assembly of a Capacitive Acoustic Transducer of the Microelectromechanical Type and Package Thereof,” U.S. Appl. No. 12/777,058, filed May 10, 2010, 48 pages.

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