Substrate laser marking

Details Substrate laser marking Substrate laser marking

2001-12-12

2008-05-13

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S637000, C257SE21577

Reexamination Certificate

active

07371659

ABSTRACT:
A method for forming a feature in a substrate, where residue within the feature can be easily removed. An upper sidewall portion of the feature is formed, where the upper sidewall portion forms a void in the substrate. The upper sidewall portion has an upper sidewall angle. A lower sidewall portion of the feature is formed, where the lower sidewall portion forms a void in the substrate. The lower sidewall portion has a lower sidewall angle. The upper sidewall angle of the upper sidewall portion is shallower than the lower sidewall angle of the lower sidewall portion. By forming the feature with a shallower sidewall angle at the top of the feature, any debris within the feature is more susceptible to rinsing, etching, or other cleaning procedures, and thus the feature is more easily cleaned than standard features having relatively steeper sidewalls.

REFERENCES:
patent: 4237601 (1980-12-01), Woolhouse et al.
patent: 5621746 (1997-04-01), Futasugi et al.
patent: 6642477 (2003-11-01), Patel et al.
patent: 6747216 (2004-06-01), Brist et al.

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