Substrate independent multiple input bi-directional ESD...

Details Substrate independent multiple input bi-directional ESD... Substrate independent multiple input bi-directional ESD...

2006-12-05

2006-12-05

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S297000, C257S328000, C257S355000, C257S360000, C438S223000, C438S224000, C438S225000, C438S226000, C438S227000, C438S228000, C360S323000, C361S056000

Reexamination Certificate

active

07145187

ABSTRACT:
In a multiple input ESD protection structure, the inputs are isolated from the substrate by highly doped regions of opposite polarity to the input regions. Dual polarity is achieved by providing a symmetrical structure with n+ and p+ regions forming each dual polarity input. The inputs are formed in a p-well which, in turn, is formed in a n-well. Each dual polarity input is isolated by a PBL under the p-well, and a NISO underneath the n-well. An isolation ring separates and surrounds the inputs. The isolation ring comprises a p+ ring or a p+ region, n+ region, and p+ region formed into adjacent rings.

REFERENCES:
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patent: 5763918 (1998-06-01), El-Kareh et al.
patent: 6194764 (2001-02-01), Gossner et al.
patent: 2003/0197242 (2003-10-01), Chen et al.
patent: 2004/0114287 (2004-06-01), Salling et al.
patent: 2004/0135141 (2004-07-01), Pequignot et al.
patent: 2005/0045909 (2005-03-01), Zhang

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