Substrate holder and reaction apparatus

Details Substrate holder and reaction apparatus Substrate holder and reaction apparatus

1995-04-04

1999-01-12

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118715, 118723I, 118723IR, 118728, C23C 1600

Patent

active

058581006

ABSTRACT:
The present invention relates to a reaction apparatus for receiving a reaction gas and for heating a substrate so as to form a film such as an insulating film on the substrate or for etching, with reduced power consumption for heating the substrate. The apparatus can change a substrate temperature within a short period of time, and maintains throughput while reducing labor and cost for maintenance. The apparatus includes a substrate holder (12) with a base of an insulating material in which an electrode (22) and a heater (23) for heating the held substrate (20) are contained. The apparatus also includes a processing chamber (7) enclosed by a chamber wall (7a).

REFERENCES:
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5084125 (1992-01-01), Nobuo et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5460684 (1995-10-01), Saeki
Patent Abstracts of Japan, vol. 13, No. 7 (63-282261).
Patent Abstracts of Japan, vol. 11, No. 190 (62-020321).
Patent Abstracts of Japan, vol. 13, No. 134 (63-297568).
Patent Abstracts of Japan, vol. 95, No. 1 (6-280028).

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