Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2011-03-01
2011-03-01
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C118S725000, C219S438000, C257SE21328
Reexamination Certificate
active
07897523
ABSTRACT:
A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.
REFERENCES:
patent: 6692574 (2004-02-01), Tolt
patent: 7358200 (2008-04-01), Yoo
patent: 7645342 (2010-01-01), Emerson et al.
patent: 2008/0078325 (2008-04-01), Matsuda et al.
patent: 2009/0321412 (2009-12-01), Masaki et al.
patent: 10-045474 (1998-02-01), None
patent: 2912613 (1999-04-01), None
patent: 2912616 (1999-04-01), None
patent: 2912913 (1999-04-01), None
Shibagaki, M., et al., “Development of the Novel Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal,” Materials Science Forum, vols. 483-485, p. 609-612 (2005).
Kimoto, T., et al., “Nitrogen Ion Implantation into α-SiC Epitaxial Layers,” Phys. Stat. Sol., vol. 162, p. 263-276 (1997).
Doi Hiroshi
Egami Akihiro
Hasegawa Shin-ya
Sasaki Toshiaki
Shibagaki Masami
Canon Anelva Corporation
Canon Anelva Engineering Corporation
Fitzpatrick ,Cella, Harper & Scinto
Quach Tuan N.
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