Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-12-06
2010-10-05
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S530000, C118S725000, C392S418000
Reexamination Certificate
active
07807553
ABSTRACT:
A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.
REFERENCES:
patent: 7091138 (2006-08-01), Numasawa et al.
patent: 7317172 (2008-01-01), Lee et al.
patent: 7402505 (2008-07-01), Krivokapic
patent: 7585564 (2009-09-01), Whiteford et al.
patent: 2004/0150865 (2004-08-01), Chen et al.
patent: 2004/0197943 (2004-10-01), Izumi et al.
patent: 2006/0182966 (2006-08-01), Lee et al.
patent: 2006/0249073 (2006-11-01), Asaoka et al.
patent: 2007/0194001 (2007-08-01), Shibagaki et al.
patent: 2008/0128969 (2008-06-01), Shibagaki et al.
patent: 01-145312 (1989-06-01), None
patent: 5-047782 (1993-02-01), None
patent: 6-216333 (1994-08-01), None
patent: 10-045474 (1998-02-01), None
patent: 2002-076358 (2002-03-01), None
patent: 2004-022715 (2004-01-01), None
patent: 2004-119615 (2004-04-01), None
patent: 2004-297034 (2004-10-01), None
patent: 2005-074556 (2005-03-01), None
patent: 2005-236080 (2005-09-01), None
patent: 2006-120663 (2006-05-01), None
patent: 2006-176859 (2006-07-01), None
patent: 1999-0037189 (1999-10-01), None
patent: 19990037189 (1999-10-01), None
patent: 10-2005-0120930 (2005-12-01), None
patent: WO 2006/043530 (2006-04-01), None
patent: WO 2006/043531 (2006-04-01), None
patent: 2008/136126 (2008-11-01), None
patent: 2008/142747 (2008-11-01), None
M. Shibagaki, et al., “Impact of EBAS Annealing on Sheet Resistance Reduction for Al-Implanted 4H-SiC (0001)”, Mater. Res. Soc. Symp. Proc., vol. 911 (2006).
S. Krishnaswami, et al., “A Study on the Reliability and Stability of High Voltage 4H-SiC Mosfet Devices”, Materials Science Forum, vols. 527-529, pp. 1313-1316 (2006).
M. Shibagaki, et al., “Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal”, Materials Science Forum, vols. 483-485, pp. 609-612 (2005).
M.A. Capano, et al., “Dopant Activation and Surface Morphology of Ion Implanted 4H- and 6H-Silicon Carbide”, Journal of Electronic Materials, vol. 27, No. 4, pp. 370-376 (1998).
Y. Negoro, et al., “Technological Aspects of Ion Implantation in SiC Device Processes”, Materials Science Forum, vol. 483-485, pp. 599-604 (2005).
M. Rambach, et al., “Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing”, Materials Science Forum, vols. 483-485, pp. 621-624 (2005).
M. Shibagaki, et al., “Development and Investigation of EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing”, Materials Science Forum, vols. 527-529, pp. 807-810 (2006).
J. Senzaki, et al., “Influences of Postimplantation Annealing Conditions on Resistance Lowering in High-Phosphorus-Implanted 4H-SiC”, Journal of Applied Physics, vol. 94, No. 5, pp. 2942-2947 (Sep. 1, 2003).
Shibagaki, M., et al., “Development of the Novel Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal,” Materials Science Forum, vols. 483-485, p. 609-612 (2005).
Kimoto, T. et al., “Nitrogen Ion Implantation into α-SiC Epitaxial Layers,” Phys. Stat. Sol., vol. 162, p. 263-276 (1997).
A. Egami, et al., “Evaluation of Correlation Between Annealing Ambient and the Surface Roughening of N+Implanted 4H-SiC EBAS Annealing”, Proceedings of the 25thSymposium on Materials Science and Engineering Research Center of Ion Beam Technology, pp. i-ii, 33-36 (Dec. 8, 2006).
Akiyama Susumu
Egami Akihiro
Kumagai Akira
Numajiri Kenji
Shibagaki Masami
Canon Anelva Corporation
Fitzpatrick ,Cella, Harper & Scinto
Picardat Kevin M
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