Substrate having thin film of GaN joined thereon and method...

Details Substrate having thin film of GaN joined thereon and method... Substrate having thin film of GaN joined thereon and method...

2007-06-28

2010-06-01

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S101000, C257S183000, C257SE33034

Reexamination Certificate

active

07728348

ABSTRACT:
There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

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European Search Report issued in European Patent Application No. EP 07 01 1175.2 dated Aug. 21, 2009.

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