Substrate for use in wafer attracting apparatus and manufacturin

Details Substrate for use in wafer attracting apparatus and manufacturin Substrate for use in wafer attracting apparatus and manufacturin

1998-03-02

2000-12-26

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

361234, 279128, H01L 23053, H01L 2312

Patent

active

061664324

ABSTRACT:
A wafer attracting apparatus includes a substrate made of a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein the attracting surface is constituted by a ductile worked surface, the ductile worked surface has concave portions, a diameter of each of the concave portions is 0.1 .mu.m or less, and when the wafer is attracted onto the attracting surface of the substrate and released therefrom, the number of particles attaching to that wafer is 9.3 or less per 1 cm.sup.2.

REFERENCES:
patent: 5514243 (1996-05-01), Matsuda et al.
patent: 5600530 (1997-02-01), Smith
patent: 5715132 (1998-02-01), Steger et al.
patent: 5846595 (1998-12-01), Sun et al.
patent: 5880924 (1999-03-01), Kumar et al.
patent: 6001760 (1999-12-01), Katsuda
Patents Abstracts of Japan, vol. 1997, No. 12, Dec. 25, 1997 & JP 09 213774 A, Aug. 15, 1997 Abstract.
Patent Abstract of Japan, vol. 1996, No. 03, Mar. 29, 1996 & JP 07 297265 A, Nov. 10, 1995.
"Low voltage and High Speed Operating Electrostatic Wafer Chuck Using Sputtered Tantallian Oxide membrane", Mamoru Nakasuji et al., Journal of vacuum Science and Technology: Part A, US American Institute of Physics, N.Y., vol. 12, No. 5, pp. 2834-2839.

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