Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent
1993-10-29
1995-10-24
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
257 12, 257183, 257347, 257616, H01L 31072, H01L 2906, H01L 2701
Patent
active
054612438
ABSTRACT:
A structure with strained and defect free semiconductor layers. In a preferred embodiment, silicon on insulator may be used as a substrate for the growth of fully relaxed SiGe buffer layers. A new strain relief mechanism operates, whereby the SiGe layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an SOI substrate with a superficial silicon thickness. Initially the strain in the SiGe layer becomes equalized with the thin Si layer by creating tensile strain in the Si layer. Then the strain created in the thin Si layer is relaxed by plastic deformation during an anneal. Since dislocations are formed, and glide in the thin Si layer, threading dislocations are not introduced into the upper SiGe material. A strained silicon layer for heterostructures may then be formed on the SiGe material.
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Ek Bruce A.
Iyer Subramanian S.
Pitner Philip M.
Powell Adrian R.
Tejwani Manu J.
Aker David
International Business Machines - Corporation
Loke Steven H.
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