Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...
Reexamination Certificate
2006-03-07
2006-03-07
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With physical configuration of semiconductor surface to...
C257S618000
Reexamination Certificate
active
07009270
ABSTRACT:
A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.
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Ghyselen Bruno
Letertre Fabrice
Rayssac Oliver
Potter Roy
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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