Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2005-08-09
2005-08-09
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S701000, C257S780000, C257S730000, C257S784000, C257S787000, C257S690000
Reexamination Certificate
active
06927485
ABSTRACT:
A substrate for a semiconductor package is provided, which includes: a core layer; at least a metal layer applied over each of upper and lower surfaces of the core layer, wherein the metal layer on the upper surface forms a plurality of conductive traces each having a terminal, and the metal layer on the lower surface is defined with a conductive region and a surrounding peripheral region, allowing the conductive region to form a plurality of conductive traces each having a terminal; and an insulating layer applied over each of the metal layers, wherein terminals of the conductive traces and at least a corner portion of the peripheral region are exposed to outside of the insulating layers. During fabrication of semiconductor packages, after a post molding curing process, the vertically-stacked substrates can be easily separated by virtue of a gap being formed between exposed corner portions of the stacked substrates.
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Feng Shy-Hwa
Kuo Ken-Hung
Lai Yu-Ting
Corless Peter F.
Edwards & Angell LLP
Jensen Steven M.
Parekh Nitin
Siliconware Precision Industries Co. Ltd.
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