Substrate for semiconductor light-emitting element,...

Details Substrate for semiconductor light-emitting element,... Substrate for semiconductor light-emitting element,...

2007-02-06

2007-02-06

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S013000

Reexamination Certificate

active

11095450

ABSTRACT:
A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

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