Substrate for semiconductor device, semiconductor device and...

Valves and valve actuation – Rotary valves – Ball valve

Reexamination Certificate

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C257S774000, C438S637000

Reexamination Certificate

active

06250606

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to a substrate for a semiconductor device, a semiconductor device and a manufacturing method thereof, and more particularly, to a resin encapsulation type semiconductor device reduced substantially to a chip size suitable for high density packaging.
2. Description of the Background Art
Chip-size Package (CSP) semiconductor devices such as QFP (Quad Flat Package) type or BGA (Ball Grid Array) type devices have been in wide use to cope with the recent trend toward lighter and more compact apparatus in the market of electrical appliances and adapt to automated assembly process. Increased speed and number of functions in signal processing by semiconductor elements incorporated in these semiconductor devices require a larger number of external connection terminals.
In such a case, a BGA type device having external connection terminals arranged two-dimensionally at the bottom of the semiconductor device is employed. Some devices are formed to be as small as possible so that they can be incorporated into compact mobile equipment, in other words they are formed to have a size close to the chip size. In one of such BGA type devices, with the surface of a semiconductor chip having MOS transistors or the like formed facing up, connection is made to a wiring (interconnection) board by wire bonding to provide conduction with external connection terminals via a wiring (interconnection) pattern.
A cross section of a conventional resin encapsulation type semiconductor device (Japanese Patent Laying-Open No. 9-121002) is given in FIG.
16
.
As shown in
FIG. 16
, a semiconductor chip
11
is mounted on an insulating substrate
15
, and a wiring pattern
16
for connection with semiconductor chip
11
is formed in an outer peripheral region of semiconductor chip
11
. Semiconductor chip
11
and wiring pattern
16
are electrically connected by wire bonding using a gold (Au) wire
13
. Provided in a region between semiconductor chip
11
and insulating substrate
15
is a land
17
for connection with an external connection terminal which covers the entire opening of a through hole
19
and is electrically connected with wiling pattern
16
. Semiconductor chip
11
and Au wire
13
are encapsulated with resin
12
, and an external connection terminal
14
is electrically connected to land
17
via through hole
19
.
In the semiconductor device having this configuration, through hole
19
of insulating substrate
15
for connecting external connection terminal
14
is formed using dice or a drill, by etching or the like. In the case using dice, if the position, size or number of through holes
19
is changed, dice must be manufactured based on each size, resulting in significant increase in the cost. If a drill is used, the number of steps/cost included in the manufacture of the insulating substrate increases as a function of increase in the number of through holes.
Meanwhile, if through hole
19
is formed by etching, the position, number and size of through holes can be changed simply by changing the mask used for etching the insulating substrate, and therefore such changes can be made less costly. Furthermore, the shape of the through hole can be readily changed.
FIG. 17
is a cross sectional view of insulating substrate
15
having through hole
19
formed by dice or a d(ill, and
FIG. 18
is a cross sectional view of insulating substrate
15
having through hole
19
processed by etching. In the case of processing with dice or the like, the wall surface of through hole
19
is formed substantially perpendicular to the forming surface of wiring pattern
16
, while in the case of etching, the resulting wall surface of through hole
19
is tapered rather than being perpendicular.
A land shape modified by providing a groove at the wall of a through hole is suggested by the disclosure of a conventional BGA-type semiconductor device (Japanese Patent Laying-Open No. 11-87427), and according to this conventional technique, an escape passage is provided for flux when a solder ball is mounted in order to improve the placing characteristic of the solder ball. Since the land portion does not entirely cover the substrate side of the through hole, the reliability is degraded accordingly.
The above-described semiconductor device is compact and has an area array structure. A semiconductor device having such a configuration is mounted by reflow on a wiring board such as a printed circuit board. After the mounting by reflow, stress is generated at the connection portion between the semiconductor device and the wiring board because of their different line expansion coefficients or the like in a heating cycle or the like. The above-described semiconductor device has one side of the semiconductor chip encapsulated with mold resin, and therefore a bowing part forms in the semiconductor device as shown in
FIG. 19
if the temperature changes because of a phenomenon characteristic to a bimetal-like structure of the semiconductor chip and mold resin. The above difference in the line expansion coefficients or the bowing of the semiconductor device could cause cracks at the connection portion between the semiconductor device and wiring board
18
, leading to breaking in some cases.
The structure as shown in
FIG. 17
in which the wall of the through hole in the insulating substrate is perpendicular to the circuit forming surface is different from the tapered structure as shown in
FIG. 18
in the shape of the connection portion between the semiconductor device and the wiring board. The connection portions take shapes conforming to the wall of through hole
19
as shown in
FIGS. 20 and 21
. If external connection terminal
14
has different shapes as in these figures, the distribution of stress will be different between the connection portions, resulting in different resistance to thermal stress. More specifically, in the structure in
FIG. 20
, since the stress is dispersed, a high reliability level is secured, while in the case of the tapered structure, the stress concentrates around position A in FIG.
21
and therefore the reliability level is lower in the tapered structure under the same conditions. Hence, changing the shape of the connection portion so as to reduce the concentration of the stress would improve the reliability level.
Since the stress imposed upon the connection portion between the wiring board and the package is generated by difference between the line expansion coefficients of the wiring board and the package and the bowing of the package, the direction of the stress runs radially from the center of the package and the magnitude of the stress increases as a function of the distance from the center of the package.
SUMMARY OF THE INVENTION
It is an object of the present invention is to provide a substrate for a semiconductor device having a through hole for connecting a wiring pattern for an insulating substrate and an external connection terminal, formed by etching, which allows the cost to be reduced and the design to be easily changed without lowering the reliability level, and to provide a semiconductor device having such a substrate.
A substrate for a semiconductor device according to one aspect of the present invention includes an insulating substrate and a conductive layer. The insulating substrate has one surface, the other surface opposing this one surface, and a plurality of first through holes communicating between the one surface and the other surface. The conductive layer has a conductive portion formed to cover the openings of the first though holes at the one surface of the insulating substrate. The first through holes are defined by the sidewall surface of the insulating substrate which is formed such that the opening area of the first through hole increases from the one surface to the other surface. The shape of the opening of the first through holes has a projected portion at a part where stress is concentrated when the insulating substrate having a semiconductor chip mounted on the on

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