Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-11-13
2007-11-13
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257SE23070, C257SE31131, C257SE21504, C257SE21518, C257SE21525, C257S782000, C257S783000, C257S786000, C257S676000, C257S784000, C257S668000, C438S015000, C438S017000, C324S691000, C324S763010, C324S765010
Reexamination Certificate
active
10473454
ABSTRACT:
A substrate (1) is formed from a non-electrically conducting material and is for mounting a semiconductor chip (10). The substrate has a semiconductor chip mounting portion (6). A number of first electrically conducting contact portions (5) are formed on the surface of the material and associated with the mounting portion (6). A second electrically conducting contact portion (3) is formed on the surface of the material, and the second electrically conducting contact portion (3) is adapted to be coupled to testing equipment. A number of electrically conducting paths (4) are formed on the surface of the material. The conducting paths (4) electrically connect the second electrically conducting contact portion (3) to a minority of the first electrically conducting contact portions (5).
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patent: 4133341 (1992-05-01), None
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Infineon Technologies A.G.
Senniger Powers
Williams Alexander Oscar
LandOfFree
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