Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Reexamination Certificate
2007-08-28
2007-08-28
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
C257S628000, C257SE21125
Reexamination Certificate
active
11174610
ABSTRACT:
A substrate1for growing an electro-optical single crystal thin film in which two or more layers of buffer layers3, 4, and5for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate2is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film6etc. with a large size and a very high quality.
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C.H. Lei et al.; “Microstructure and Orientation Relations of BaTiO3/MgO/YSZ Multilayers Deposited on Si(0 0 1) Substrates by Laser Ablation”, Journal of Crystal Growth, vol. 24, pp. 137-144, 1997.
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Abe Yoshihisa
Komiyama Jun
Nakanishi Hideo
Suzuki Shunichi
Covalent Materials Corporation
Foley & Lardner LLP
Ngo Ngan V.
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