Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate
2005-03-22
2005-03-22
Stein, Stephen (Department: 1775)
Stock material or miscellaneous articles
Composite
Of inorganic material
C428S620000, C428S336000
Reexamination Certificate
active
06869702
ABSTRACT:
A substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is provided. A nitride film containing at least Al is formed on a 6H—SiC base by CVD at a temperature of at least 1100° C., for example. The substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is obtained by setting the dislocation density of the nitride film to not more than 1×1011/cm2, the full width at half maximum of an X-ray rocking curve for (002) plane to not more than 200 seconds and the full width at the half maximum of the X-ray rocking curve for (102) plane to not more than 1500 seconds.
REFERENCES:
patent: 5915194 (1999-06-01), Powell et al.
patent: 6117735 (2000-09-01), Ueno
patent: 6252255 (2001-06-01), Ueta et al.
patent: 6426519 (2002-07-01), Asai et al.
patent: 6488771 (2002-12-01), Powell et al.
patent: 6531719 (2003-03-01), Shibata et al.
patent: 6583468 (2003-06-01), Hori et al.
patent: 6649493 (2003-11-01), Asai et al.
patent: 6706620 (2004-03-01), Shibata et al.
Toshio Nishida et al.,“Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates,” Japan Journal of Applied Physics, vol. 37 (1998), Part 2, No. 4B, Apr. 15, 1998, pp. L459-L461.
Asai Keiichiro
Shibata Tomohiko
Sumiya Shigeaki
Tanaka Mitsuhiro
Burr & Brown
NGK Insulators Ltd.
Stein Stephen
LandOfFree
Substrate for epitaxial growth does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate for epitaxial growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate for epitaxial growth will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3451060