Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-08-23
2005-08-23
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S706000, C438S719000, C438S745000, C257S622000
Reexamination Certificate
active
06933237
ABSTRACT:
The present invention provides methods and an etched substrate. In one embodiment, a method for etching a substrate is provided which comprises creating an etch hole in the substrate using a through the substrate etch and forming a junction on an interior of the etched hole for forming a semiconductor device therein.
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Chen Chien-Hua
McMahon Terry
Schulte Donald W.
Hewlett--Packard Development Company, L.P.
Norton Nadine G.
Umez-Eronini Lynette T.
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