Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-08
2008-08-19
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S668000, C257S774000, C257S758000, C257S759000, C257SE21585, C257SE21586
Reexamination Certificate
active
07413978
ABSTRACT:
A contact structure, including: a first conductive layer; a insulating layer formed on the first conductive layer; a second conductive layer formed on the insulating layer; and a columnar structure, buried in a direction of film thickness in the insulating layer, electrically connecting the first conductive layer and the second conductive layer; wherein a reinforcement material is adhered to a vicinity of a root of the columnar structure.
REFERENCES:
patent: 6476503 (2002-11-01), Imamura et al.
patent: 2003/0082906 (2003-05-01), Lammert
patent: 2005/0026421 (2005-02-01), Tanaka et al.
patent: A 2003-179139 (2003-06-01), None
Oliff & Berridg,e PLC
Seiko Epson Corporation
Thai Luan
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