Substrate developing method, substrate processing method and...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product

Reexamination Certificate

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C430S322000

Reexamination Certificate

active

07846648

ABSTRACT:
According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.

REFERENCES:
patent: 4529685 (1985-07-01), Borodovsky
patent: 5139715 (1992-08-01), Katsuno et al.
patent: 5635333 (1997-06-01), Petersen et al.
patent: 5854953 (1998-12-01), Semba
patent: 6159662 (2000-12-01), Chen et al.
patent: 6267516 (2001-07-01), Nagamine et al.
patent: 6284043 (2001-09-01), Takekuma
patent: 6602382 (2003-08-01), Matsuyama et al.
patent: 6819427 (2004-11-01), Subramanian et al.
patent: 2005/0223980 (2005-10-01), Awamura et al.
patent: 2007/0184178 (2007-08-01), Yamamoto et al.
patent: 0 451 921 (1991-10-01), None
patent: 08-097191 (1996-04-01), None
patent: WO 97/34200 (1997-09-01), None

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