Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product
Reexamination Certificate
2008-02-13
2010-12-07
Kelly, Cynthia H (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Finishing or perfecting composition or product
C430S322000
Reexamination Certificate
active
07846648
ABSTRACT:
According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.
REFERENCES:
patent: 4529685 (1985-07-01), Borodovsky
patent: 5139715 (1992-08-01), Katsuno et al.
patent: 5635333 (1997-06-01), Petersen et al.
patent: 5854953 (1998-12-01), Semba
patent: 6159662 (2000-12-01), Chen et al.
patent: 6267516 (2001-07-01), Nagamine et al.
patent: 6284043 (2001-09-01), Takekuma
patent: 6602382 (2003-08-01), Matsuyama et al.
patent: 6819427 (2004-11-01), Subramanian et al.
patent: 2005/0223980 (2005-10-01), Awamura et al.
patent: 2007/0184178 (2007-08-01), Yamamoto et al.
patent: 0 451 921 (1991-10-01), None
patent: 08-097191 (1996-04-01), None
patent: WO 97/34200 (1997-09-01), None
Shizukuishi Momoko
Yaegashi Hidetami
Eoff Anca
Kelly Cynthia H
Rader & Fishman & Grauer, PLLC
Tokyo Electron Limited
LandOfFree
Substrate developing method, substrate processing method and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate developing method, substrate processing method and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate developing method, substrate processing method and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4173399