Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Reexamination Certificate
2009-01-21
2011-11-15
Fahmy, Wael (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
C438S119000, C438S117000, C257SE21122, C257SE21129, C257SE21496
Reexamination Certificate
active
08058143
ABSTRACT:
A method that in one embodiment is useful in bonding a first substrate to a second substrate includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate is formed a first layer comprising silicon. A second layer comprising germanium and silicon is formed on the first layer. A third layer comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS.
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PCT Application No. PCT/US2010/020847; Search Report and Written Opinion dated Jul. 29, 2010.
Montez Ruben B.
Pamatat Alex P.
Clingan, Jr. James L.
Dolezal David G.
Fahmy Wael
Freescale Semiconductor Inc.
Jefferson Quovaunda V
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