Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-27
2005-12-27
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C257S365000, C257S371000, C257S401000, C257S546000
Reexamination Certificate
active
06979869
ABSTRACT:
A semiconductor device which includes a P-well which is underneath NMOS fingers. The device includes an N-well ring which is configured so that the inner P-well underneath the NMOS fingers is separated from an outer P-well. The inner P-well and outer P-well are connected by a P-substrate resistance which is much higher than the resistance of the P-wells. A P+-diffusion ring surrounding the N-well ring is configured to connect to VSS, i.e., P-taps.
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Duvvury, C., “ESD On-Chip Protection in Advanced Technologies”, 1999 ESD tutorial, Orlando, Florida, Sep. 26, 1999.
Duvvury, C et al., “Advanced CMOS Protection Device Trigger Mechanisms During CDM”, EOS/ESD Symposium, 1995.
Bendix Peter
Chen Jau-Wen
Huh Yoon
LSI Logic Corporation
Thomas Tom
Warren Matthew E.
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